Dynamic Behavior of Surface Atoms on Si(001) and Ge(001) Observed by Variable Temperature STM

Tomoshige SATO; Takaaki AMAKUSA; Masashi IWATSUKI; Hiroshi TOCHIHARA

doi:10.1380/jsssj.19.652

Tomoshige SATO, Takaaki AMAKUSA, Masashi IWATSUKI, Hiroshi TOCHIHARA

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JOURNAL FREE ACCESS

1998 Volume 19 Issue 10 Pages 652-657

DOI https://doi.org/10.1380/jsssj.19.652

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Published: October 10, 1998 Received: October 30, 1997 Available on J-STAGE: August 07, 2009 Accepted: October 30, 1997 Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: ABSTRACT Details: Wrong : Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.
Right : Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.

Date of correction: August 07, 2009 Reason for correction: - Correction: CITATION Details: Wrong : 1) R.M. Tromp, R.J. Hamers and J.E. Demuth: Phys. Rev. Lett. 55,1303 (1985).
2) R.J. Hamers, R.M. Tromp and J.E. Demuth: Phys. Rev. B 34, 5343 (1986).
3) J.A. Kubby, J.E. Griffith, R.S. Becker and J.S. Vickers: Phys. Rev. B 36, 6079 (1987).
4) T. Tabata, T. Aruga and Y. Murata: Surf. Sci.179, L 63 (1987).
5) M. Kubota and Y. Murata: Phys. Rev. B 49, 4810 (1994).
6) RIG. Uhrberg, G.V. Hansseor, J.M. Nicholls and S.A. Flödstrom: Phys. Rev. B 24, 4686 (1981).
7) R.A. Walkow: Phys. Rev. Lett. 68, 2636 (1992).
8) H. Tochihara, T. Amakusa and M. Iwatsuki: Phys. Rev. B 50, 12262 (1994).
9) M. Iwatsuki, T. Sato and Y. Yamamoto: Appl. Surf. Sci. 92, 321(1996).
12) T. Sato, T. Sueyoshi, T..Amakusa, M. Iwatsuki and H. Tochihara: Surf. Sci. 344, 328 (1995).
13) T. Komura, M. Yoshimura and T. Yao: J. Vac. Sci. Technol. B 14, 906 (1996).14) H. Shigekawa, K. Hata, K. Miyake, M. Ishida and S. Ozawa: Phys. Rev. B 55, 15448 (1997).
15) Y. Nakamura, H. Kawai and M. Nakayama: Phys. Rev. B 52, 8231 (1995).
16) Y. Nakamura, H. Kawai and M. Nakayama: Surf. Sci. 357/358, 500 (1996).
17) N. Kitamura, B.S. Swartzentruber, MG. Lagally and M. B. Webb: Phys. Rev. B 48, 5704 (1993).
18) C. Pearson, B. Borovsky, M. Krueger, R. Curtis and E. Ganz: Phys. Rev. Lett. 74, 2710 (1995).

Right : 1) R.M. Tromp, R.J. Hamers and J.E. Demuth: Phys. Rev. Lett. 55,1303 (1985).
2) R.J. Hamers, R.M. Tromp and J.E. Demuth: Phys. Rev. B 34, 5343 (1986).
3) J.A. Kubby, J.E. Griffith, R.S. Becker and J.S. Vickers: Phys. Rev. B 36, 6079 (1987).
4) T. Tabata, T. Aruga and Y. Murata: Surf. Sci.179, L 63 (1987).
5) M. Kubota and Y. Murata: Phys. Rev. B 49, 4810 (1994).
6) RIG. Uhrberg, G.V. Hansseor, J.M. Nicholls and S.A. Flödstrom: Phys. Rev. B 24, 4686 (1981).
7) R.A. Walkow: Phys. Rev. Lett. 68, 2636 (1992).
8) H. Tochihara, T. Amakusa and M. Iwatsuki: Phys. Rev. B 50, 12262 (1994).
9) M. Iwatsuki, T. Sato and Y. Yamamoto: Appl. Surf. Sci. 92, 321(1996).
12) T. Sato, T. Sueyoshi, T..Amakusa, M. Iwatsuki and H. Tochihara: Surf. Sci. 344, 328 (1995).
13) T. Komura, M. Yoshimura and T. Yao: J. Vac. Sci. Technol. B 14, 906 (1996).14) H. Shigekawa, K. Hata, K. Miyake, M. Ishida and S. Ozawa: Phys. Rev. B 55, 15448 (1997).
15) Y. Nakamura, H. Kawai and M. Nakayama: Phys. Rev. B 52, 8231 (1995).
16) Y. Nakamura, H. Kawai and M. Nakayama: Surf. Sci. 357/358, 500 (1996).
17) N. Kitamura, B.S. Swartzentruber, MG. Lagally and M. B. Webb: Phys. Rev. B 48, 5704 (1993).
18) C. Pearson, B. Borovsky, M. Krueger, R. Curtis and E. Ganz: Phys. Rev. Lett. 74, 2710 (1995).

Abstract

Dynamic behavior of surface atoms on Si(001) and Ge(001) was investigated by a Variable-Temperature (VT) STM. In a range of sample temperature from 30 K to 1200 K, a variety of dynamical atomic-processes were observed on the surfaces. (1) The flip-flop motion of buckled dimers was detected on Ge(001) surface at room temperature (RT). (2) The structural phase-transition from 2×1 to c(4×2) was observed both on Si(001) and Ge(001) surfaces upon cooling from RT. (3) The detachment and attachment of dimers at step edges were observed at high temperatures on Si(001) and Ge(001) surfaces. It is emphasized that time dependent VT-STM will provide fruitful information concerning the dynamic processes of surface atoms with atomic resolution.

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