Quantum Theoretical Simulation of Initial Growth Process on GaAs(001) Surfaces

Tomonori ITO

doi:10.1380/jsssj.19.665

Tomonori ITO

Author information

JOURNAL FREE ACCESS

1998 Volume 19 Issue 10 Pages 665-671

DOI https://doi.org/10.1380/jsssj.19.665

Details

Published: October 10, 1998 Received: November 07, 1997 Available on J-STAGE: August 07, 2009 Accepted: November 07, 1997 Advance online publication: - Revised: -
Correction information
Date of correction: August 07, 2009 Reason for correction: - Correction: ABSTRACT Details: Wrong : Computer-aided simulation is one of ideal vehicles for the study of dynamic growth process in thin film formation. The initial growth process of GaAs thin films is theoretically investigated from a viewpoint of quantum mechanics using Monte Carlo simulation. An ab initio-based Monte Carlo simulation study implies that Ga adatom migration behavior on the GaAs(001)-(2×4)β1 surface strongly depends on the adatom coverage. This can be successfully interpreted by the electron counting model. Based on this finding, newly developed electron counting Monte Carlo method is applied to the surface structural change during adatom impingements. The GaAs(001)-(2×4) surface changes its structure from initial (2×4)β2 to another electronically stable (2×4)β1 via (2×4)α. The Ga adsorption of 0.5 monolayer on the GaAs(001)-c(4×4) surface induces As desorption to form (2×4)-like structure with As coverage θ_AS=0.75. These results qualitatively consistent with experimental results suggest that quantum mechanical contribution is essential to thin film growth process of compound semiconductors.
Right : Computer-aided simulation is one of ideal vehicles for the study of dynamic growth process in thin film formation. The initial growth process of GaAs thin films is theoretically investigated from a viewpoint of quantum mechanics using Monte Carlo simulation. An ab initio-based Monte Carlo simulation study implies that Ga adatom migration behavior on the GaAs(001)-(2×4)β1 surface strongly depends on the adatom coverage. This can be successfully interpreted by the electron counting model. Based on this finding, newly developed electron counting Monte Carlo method is applied to the surface structural change during adatom impingements. The GaAs(001)-(2×4) surface changes its structure from initial (2×4)β2 to another electronically stable (2×4)β1 via (2×4)α. The Ga adsorption of 0.5 monolayer on the GaAs(001)-c(4×4) surface induces As desorption to form (2×4)-like structure with As coverage θ_AS=0.75. These results qualitatively consistent with experimental results suggest that quantum mechanical contribution is essential to thin film growth process of compound semiconductors.

Abstract

Computer-aided simulation is one of ideal vehicles for the study of dynamic growth process in thin film formation. The initial growth process of GaAs thin films is theoretically investigated from a viewpoint of quantum mechanics using Monte Carlo simulation. An ab initio-based Monte Carlo simulation study implies that Ga adatom migration behavior on the GaAs(001)-(2×4)β1 surface strongly depends on the adatom coverage. This can be successfully interpreted by the electron counting model. Based on this finding, newly developed electron counting Monte Carlo method is applied to the surface structural change during adatom impingements. The GaAs(001)-(2×4) surface changes its structure from initial (2×4)β2 to another electronically stable (2×4)β1 via (2×4)α. The Ga adsorption of 0.5 monolayer on the GaAs(001)-c(4×4) surface induces As desorption to form (2×4)-like structure with As coverage θ_AS=0.75. These results qualitatively consistent with experimental results suggest that quantum mechanical contribution is essential to thin film growth process of compound semiconductors.

Corresponding author

Correction information

Register with J-STAGE for free!