Abstract
Two-dimensional dopant profiles of LSI device cross-sections are extracted below 100nm scale from SCM (Scanning Capacitance Microscopy) technique. Sample cross-sections are prepared with a glass polishing technique, followed by a final polishing step with a colloidal silica. Samples are also fabricated with FIB (Focused Ion Beam) to acquire SCM images on specific cross-sections of devices, which become effective for failure analysis. The phosphorus profiles of P-doped Si substrate and DRAM device are imaged within the range of 1×1016-2×1019 atoms/cm3 with the lateral resolution of 50-60nm. The chemical bonding states of glass-polished and ion-milled Si-surfaces are also examined by XPS (X-ray Photoelectron Spectroscopy). The influence of the surface bonding-states on SCM images is discussed.
