Abstract
MBE is no longer a crystal growth technique in laboratories but has recently become a common production technology. GaAs devices, especially HEMT etc. have played an important role in making MBE technique thus popular. The progress of MBE technique also caused the progress of academic research in crystal growth and surface physics. In this paper, a couple of topics of the researches and developments of MBE is described. The present status of the device applications of it is also discussed.
