Surfaces of Hydrogenated Amorphous Silicon Films

Abstract

After a brief explanation of bulk amorphous semiconductors, the surfaces of hydrogenated amorphous silicon films a-Si: H are to be discussed. In a-Si: H, surfaces are usually covered by atomic hydrogens bonded to Si. Therefore oxidization is much slower when compared with crystalline silicon. The surface states and adsobates that induce the space change region are about 0.3 to 0.5 μm. The effects of adsobates such as H₂O, NH₃, (CH₃)₂O, O₂ and Se are to be discussed.