Abstract
A new type of surface electromigration of metal covored semiconductors was recently found and investigated by the author's group. The experimental method and some typical results are described in comparison with the conventional electromigration. The specimens used for the observation of this phenomenon are In, Ag, Sb and Sn pads with a thickness of several monolayers evaporated on cleaned Si (111) substrates of 7×7. The following phenomena were observed by the scanning Auger electron spcctroscopy. Movement of the pad toward the cathode occurs with the application of dc current through Si substrate. A characteristic layer with a uniform thickness and structure proper to the transport grows on the cathode side of the pad during the supply of dc current.
