Angle-Resolved XPS Studies of GaAs/GaP Growth Surface

Abstract

The early growth stages of GaAs films grown on GaP (100) substrates by MBE have been studied by Angle-Resolved XPS. From the results of quantitative analysis of the components of the GaAs/GaP surfaces, it was concluded that the GaAs films grew in the Stranski-Krastanov growth mode.