Abstract
The results of electro-thermal analysis, which is widely known as hydrodynamic model, are strongly dependent on the mesh size of model. However, the theory and method of accurate mesh size have not been investigated. In this research, we focus on submicron Si MOSFET and show the mesh zoning method for electro-thermal analysis. In the previous study, the authors proposed the mesh zoning method for vertical direction of Si MOSFET, i.e. the direction from the gate oxide to the bottom surface of MOSFET. The mesh zoning method was derived from the theory of the semiconductor physics. In this paper, the mesh zoning method for the lateral direction, i.e. the direction from the source electrode to the drain electrode, is considered. The calculation results show the most important point of mesh zoning for lateral direction is pinch-off point in the electron channel of MOSFET. Further, in the case that the fine meshes are used around the pinch-off point and wider meshes are used for other region, the results show good agreement with the results of the fine mesh model.
