Transfer Method of Pb(Zr, Ti)O₃ Epitaxial Thin Flms onto Glass Substrates and Evaluation of Their Dielectric Properies

Abstract

We have successfully transferred epitaxial single crystal PZT (Pb(Zr, Ti)O₃) thin films from MgO substrates onto glass substrates by using micro fabrication process. The internal compressive stress of about 200 MPa in the epitaxial PZT thin films was released after the transference. The relative dielectric constant of the PZT thin films increased from 239.4 to 332.9 after the transference with a small decrease of polarization. The crystallinity and crystal orientation of the PZT thin films on the glass substrates were the same to those of epitaxial virgin PZT thin films on the MgO substrates. The transfer process is useful for a fabrication of PZT thin film MEMS devices on any substrates.