Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Letters
The Effects of Plasma Etching and Thermal Annealing Treatment on Single-crystal CdTe
Kazuto KOIKETakuma KATOHHisashi HARADAHi-izu OCHIMitsuaki YANO
Author information
JOURNAL FREE ACCESS

2006 Volume 49 Issue 3 Pages 126-128

Details
Abstract
  The effect of H2 plasma irradiation on a Cl-doped CdTe(111)B crystal was studied by comparing with that of the same irradiation but combined with a post-irradiation thermal annealing in a Cd ambient. Photoluminescence (PL) property of the CdTe crystal was found to be degraded by a two-months storage in a low-pressure desiccator. Electron spectroscopy for chemical analysis revealed that native oxide such as TeO2 was formed on the CdTe surface after the storage. Irradiation by H2 plasma was effective to remove the oxide completely. However, the PL property after the H2 plasma irradiation did not recover the original one due to the formation of Cd vacancy by ion bombardment. The post-irradiation annealing was found to be effective to recover the damage by ion bombardment.
Content from these authors
© 2006 by The Vacuum Society of Japan
Previous article Next article
feedback
Top