2006 Volume 49 Issue 6 Pages 377-379
Approximately 250-nm-thick Ga-doped zinc oxide (GZO: 3 wt.% Ga2O3) films have been prepared on glass substrates at room temperature by pulsed laser deposition (PLD) using ArF excimer laser. During the deposition process, oxygen with partial pressure of 0-1.0 Pa was introduced in the chamber. The film fabrication was carried out under condition of laser energy density with 0.6 to 2 J/cm2. The lowest resistivity of 3.34×10-4 Ω•cm was obtained under optimized condition of laser energy density of 1 J/cm2 with oxygen partial pressure of 1.0 Pa. For the GZO films fabricated with laser energy density of 1 and 2 J/cm2, the values of surface roughness Ra obtained by AFM observation were 2.93 and 3.14 nm, respectively.
