Abstract
Hydrophilic silicon oxide film was formed at a low temperature (below 50°C) condition by pulsed plasma chemical vapor deposition (Pulsed Plasma CVD) method using by Si(CH3)4 (TMS), O2 and Ar as reactant gases. Pulsed Plasma CVD is the technique of preparing film by pulsed rf power supply and pulsed gas supply. And we found that Pulsed Plasma CVD technique is able to make a nanoscale roughness on the silicon oxide film. The roughened surface tended to be more hydrophilic than the smooth surface. Hydrophilic silicon oxide film could be used for demist glasses, and it made the stain go away easily. Sometimes when the film deposited on a mold, a nanoscale surface roughness was able to improve mold separation force.
