Abstract
To develop nanometric film thickness standard (FTSs), uniformity of silicon dioxide thin film were investigated by X-ray Reflectometry (XRR). The samples we investigated were thermally grown oxides (O2-Oxides) and ozone-formed oxide(Ozone-Oxide). The O2-oxide were grown on Si(100) substrate at 1000°C and at 700°C. The Ozone-Oxide was grown at 750°C with the highly concentrated ozone gas. With XRR method the bulk-layer density of oxide films were analyzed for; the O2-Oxide formed at 700°C (D700), the O2-Oxide formed at 1000°C(D1000), and the Ozone-Oxide formed at 750°C (Dozone750). We also analyzed the transition-layer density of the O2-Oxide formed at 700°C (DTL700). The results showed the relation was D1000<Dozone750<D700<DTL700. The result indicated that Ozone-Oxide is suitable to produce the FTSs which demands the homogeneous density in SiO2 thin film, and also indicated that the density of Ozone-Oxide corresponded to that of O2-Oxide with much higher substrate temperature.
