Abstract
PbSxSei1-xalloy thin films have been prepared onto rock salt and PbSxSei_x single crystal substrates by coevaporation method, and their properties have been investigated. By compensating with an independent selenium vapor source and at the appropriate substrate and source temperatures, both n- and p-type epitaxial layers with carrier concentration, 1018 cm-3, have been obtained. PbSxSei1-x alloy compositions of the deposited layers were determined by X-ray diffraction method and found to be dependent on the selenium source temperatures during evaporation. p-n junction diodes have been prepared from n-type PbS0.5Se0.5single crystal substrates and p-type PbSxS1-xepitaxial layers. These diodes show neither good rectification characteristics nor large RA0 products due to leakage current at the present time.
