Abstract
A method of vacuum deposition of Si combined with ion implantation of Sb was investigated. Sb contents in Si thin films at deposition temperatures of 290°C and 460°C were determined by neutron activation analysis. They were proved to be controllable with this method from the result of their liniar relationship to total ion current. In-depth profiles of Sb in Si films were measured by ESCA with a controlled ion mill. The depth of the implanted layer was in good agreement with the predicted one from experimental conditions. The half width of the distribution appeared to depend on the diffusion coefficient of ion implantation at high temperature. The Sb content evaluated from the distribution and that obtained from neutron activation analysis were the same order of magnitude.
