Abstract
Carbon films have been prepared by R.F. plasma decomposition of benzene vapour, intending to obtain high conductive films at low decomposition temperature. The surface mophology, structure, IR absorption and electrical properties have been investigated.
By this method, carbon films can be obtained at decomposition temperature range of 4001000°C. Electron transmission microscopy and electron diffraction analysises show that carbon films consist of microfine particles and have graphite like structure. Increasing the decomposition temperature, the intensity of absorption corresponding to the vibration of C-H bonds tends to decrease and the resistivity of carbon films rapidly decrease, owing to the crystallization and evaporation of hydrogen. Conductivity of carbon films prepared at low decomposition temperature rapidly increases with increasing the ambient temperature as like semiconductor. On the other hand, carbon films prepared at high decomposition temperature show weak dependence of conductivity on the ambient temperature as like narrow gap semiconductor, and have p type conduction.
