The Products on Si-Wafers in the Methane Plasma

Abstract

We studied the properties of films produced by cracking methane gases in a microwave discharge in the temperature range 700-1000°C, methane concentrations from 1 to 6% and discharge pressures from 300-6000 Pa.
The deposits were identified by secondary electron microscopy and electron diffraction. It was found that the structure of deposited films could be classified into 5 types by deposition conditions; (amorphous, diamond, a, β-SiC and graphite).