Abstract
Tapered etching has been performed on an aluminum alloy and silicon oxide at relatively high pressure using the resist mask with an overhang profile which has been fabricated by Image Reversal Process (IR Process). Collisions between ions and neutrals due to the short mean free path produce much oblique-impinging ions which can reach the area under the overhang resist. On the other hand, the species produced from the resist decomposition and deposition gas such as fluolocarbon or SiCl4 deposit on the substrate surface to form the side wall protection film. The tapered feature can be accomplished by the competitive process of the side wall ething by the inclined ions and the side wall protection by the redeposited film.
