Abstract
Pb5CrO8 thin films have been deposited by means of an electron beam evaporation technique on glass substrates. The thin film fabrication conditions were studied using X-ray diffraction and TEM as a function of substrate temperature (Ts) and annealing temperature (Ta). It was found that the substrate temperature contributed to film crystallinity, and the annealing proces enhanced film orientation. The optimum conditions of Ts and Ta were 300°C and 350°C, respectively. The optical bandgap energy of the thin film, derived from the transmittance and reflectance spectra, was 2.22 eV. A Pb5CrO8 thin film device with Au interdigital electrodes was photosensitive in the visible region. The ratio of photocurrent to darkcurrent was about 160 and the photocurrent increased linearly with the light intensity in the log log-plot. The result suggests that Pb5CrO8 may be a new photoconductive material.
