Ba_xRb_1-xBiO₃ Thin Film Deposition by Molecular Beam Epitaxy Using Distilled Ozone

Abstract

We have carried out detailed investigations on preparation of distilled ozone and rubidium beam flux, and on their influence on an ultra-high-vacuum growth chamber for Ba_xRb_1-xBiO₃ thin film deposition by molecular beam epitaxy using distilled ozone. Distilled ozone and stable rubidium-beam-flux can be successfully prepared for use in deposition of high-quality Ba_xRb_1-xBiO₃ film by molecular beam epitaxy. Relatively stable rubidium-beam-flux can be obtained by continuous slow heating of Rb₂O up to 500-600°C prior to the use of Rb₂O in the growth chamber. Large amounts of outgassing products such as hydrogen and nitrogen were found to be emitted from barium and rubidium sources, respectively. It is revealed that distilled ozone and rubidium had no severely bad influence on the ultra-high-vacuum system.