Determination of Polar Planes of Compound Semiconductor GaP by Field-Ion Microscopy

Shinku

Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516

J-STAGE home
/
Shinku
/
Volume 39 (1996) Issue 7
/
Article overview

Determination of Polar Planes of Compound Semiconductor GaP by Field-Ion Microscopy

Toshiyuki ADACHI

Author information

JOURNAL FREE ACCESS

1996 Volume 39 Issue 7 Pages 352-355

DOI https://doi.org/10.3131/jvsj.39.352

Details

Article 1st page

Content from these authors

© The Vacuum Society of Japan

Favorites & Alerts

Related articles

Recently viewed articles

A Fast Rangefinder Based on the Intensity Control of Plural Light Sources
Revisiting the Impact of Stochastic Multicloud Model on the MJO Using Low-Resolution ECHAM6.3 Atmosphere Model
Discovering New in Educational Media Study by Taking Lessons from the Past
Prediction of Deactivation and Regeneration of DeNOx Catalyst Using Simple Reaction Model - 2nd Report : Modeling for Predicting Catalyst Regeneration and its Application
A case requiring laparoscoric enterolithotomy for gallstone ileus

Top