1998 Volume 41 Issue 3 Pages 155-158
The energy distribution of positive ions in dc and rf magnetron sputtering enhanced additional rf plasma using Ti cathode was measured by an energy-resolved mass spectrometer. The rf-coil in front of the cathode generates an inductively coupled rf plasma enhancing the ionization of sputtered particles and discharge gasses in the region between the substrate and the cathode. The rf-coil power was changed from 0 to 200 W to investigate the effect of rf-power to energy distribution of sputtered particles. The Ti thin films produced by the sputtering were analyzed by X-ray diffraction.
The experimental results show that the enhanced energy of sputtered Ti particles ranged by the rf plasma from a few eV to about 90 eV in dc sputtering and from a few ten eV to about 110 eV in rf sputtering. The energy distribution of Ar positive ions shows similar tendency. The crystal orientation of deposited Ti thin films was affected by energy distribution of positive ions.
