Synthesis and Characterization of Carbon Nitride Thin Films by Pulsed Laser Deposition Using Radical Beam Source

Abstract

Carbon nitride (CN_x ) thin films were deposited on Corning #7059 glass and Si (100) substrates by pulsed laser deposition (PLD) using a radical beam source. The deposited films were characterized by SEM, XRD, XPS, FT-IR, and Raman spectroscopy. Nitrogen content in the films increased with increasing RF power and N₂ gas pressure in the deposition chamber. A film with N/C atomic ratio of 0.25 was obtained at 400 W of RF power and 1.3 Pa of N₂. N 1s XPS spectra show the existence of N-sp²C and N-sp³C bonds in the films. The fraction of N-sp³C increased with increasing nitrogen content in the film. FT-IR and Raman spectra of the deposited films indicated that N-spC (N≡C) bond in the deposited films were few. The N/C atomic ratio decreased with increasing heat-treatment temperature. The fraction of N-sp²C increased with increasing heat-treatment temperature. Heat-treatment of the film caused growth of graphitic domains in the film.