InN Films Prepared by Sputtering in N₂ and H₂

Effects of H₂ Pressure on Film Properties

Abstract

Indium nitride thin films have been prepared by an rf magnetron sputtering from In target in N₂ and H₂ gas mixtures. The effects of H₂ partial pressure ratio R on the structural, optical and electrical properties of the films were investigated. With increasing R, the deposion rate of the films decreased, and the film structure was changed from crystalline phase with a hexagonal wurtzite structure to amorphous-like one. The bandgap, resistivity, carrier density and mobility also changed depending on R. In low R range, the resistivity was increased against R.