Deposition Rate of Ni Thin Films by Modified r. f. Magnetron Sputtering

Abstract

In order to obtain high deposition rate of Ni films, we have developed a modified magnetron sputtering cathode configuration with a ferromagnetic Ni target of 100 mm in diameter and 5 mm in thickness. The plasma confinement could be enhanced by providing four special permanent magnets around outside the cathode. Nickel films were prepared at the rf power of 100 to 200 W and the argon gas pressure of 6.7×10^-1 to 8.1×10^-2 Pa. The deposition rate was 14 nm/min, four times as large as that of a conventional magnetron sputtering at an rf power of 100 W and an argon gas pressure of 6.7×10^-1Pa.