Propose of Reactive Sputtering using Solid Oxygen Source for Low-Temperature and High Deposition Rate Fabrication of Pb (Zr, Ti) O₃ Thin Film

Abstract

A new film deposition technique by reactive sputtering using a metal-oxide combined targe (ZrTi + PbO) was proposed and the film growth mechanism was discussed. By the technique perovskite Pb (Zr, Ti) O₃ (PZT) films could be grown at a substrate temperature as low as 450°C. Oxygen atoms for the reactive sputtering was not supplied from introduced O₂ gas but from the PbO oxide target. The oxygen flux from the PbO solid source plays an important role to crystallize the perovskite PZT films.