Abstract
Recently it was found that a low temperature and high speed oxidation was achieved by plasma of rare gas and oxygen mixture. In our system, using krypton as a mixed rare gas, oxidation rate was a few times higher than oxygen without mixture gas. We have measured a time evolution of surface stress during oxidation using plasma of rare gas and oxygen mixture. It's remarkable that the oxide film made by the mixture plasma had been grown without any stress from the thickness of 5 nm to 8 nm. It still had no compressive stress at 8 nm.
