Preparing Condutive Transparent ITO Films on Glass at 200°C by RF and DC Magnetron Sputtering

Abstract

The resistivities of the ITO films on glass at 200°C prepared by RF magnetron sputtering of a 97% density target, under the total pressure 9.5 × 10^-1Pa or 1.9 Pa of Ar containing 0.0150.05% O₂ partial pressure ratio, were around 2.0 × 10^-4Ω·cm. The deposition rate per unit power of RF was too lower than that of DC under the total pressure 1.9 Pa. The self bias voltages of the target in RF sputtering were measured, and a method of controling self bias voltages is proposed to lower the resistivity.