Properties of Amorphous SiC : O : H Films Prepared by Magnetron Sputtering of Si in CH₄and CO₂

Abstract

Amorphous SiC : O : H films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH₄ and CO₂ gas mixtures. The effect of CO₂ partial pressure ratio Ron the electrical and optical properties of the films was investigated. With increasing R, the optical bandgap increases, the dark conductivity decreases, whereas the pho-toconductivity shows a maximum at R= 10%. These data may relate to the change of bonding configuration in ir spectra.