Abstract
Thin films of the layered Gallium Sulfide (GaS) on fused silica have been grown at substrate temperature in the range 25-400°C by electron beam deposition method, and characterized through X-ray diffraction, nano-probe microscopy, optical absorption and Raman spectra studies. The films deposited at 400°C have a crystalline structure and the c-axis in the hexagonal phase is oriented perpendicular to the substrate plane. The optical properties in the crystalline GaS films follow the same mechanism as that of the GaS single crystal.
