Sterilization Process by Plasma Source Ion Implantation Using Inactive Gas

Abstract

Plasma source ion implantation (PSII) with high negative pulsed voltage applied to the workpiece is demonstrated as an effective low-temperature sterilization technique for three-dimensional work pieces. Using an N₂ or Ar gas plasma and a pulsed voltage of -5 to -16 kV (10 μs pulse width, 900 pps), the method is shown to reduce the number of active Bacillus Pumilus spores by 3-5 log colony forming units after 15 min exposure.