Abstract
Amorphous SiCS : H films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH4 and H2S gas mixtures. The effects of H2S partial pressure ratio R on the optical and electrical properties of the films were investigated.
With increasing R, sulfur-related bonding configuration can be observed in IR spectra. Both the dark and photo conductivity increase by about two orders of magnitude with increasing R, whereas the optical bandgap decreases slightly. These data imply that S atoms may act as dopants. Moreover, the incorporated S atoms may contribute to relax the disordered structure of undoped films.
