Preprints of the National Meeting of JWS
the national meeting 2008 spring
Session ID : 414
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Formation of Ti3SiC2 on SiC by Control of Interfacial Reaction between SiC and Ti/Al Multilayer
*Masakatsu MaedaYasuo Takahashi
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Abstract
A method to produce a uniform layer of Ti3SiC2 adjacent to SiC by appropriate control of the interfacial reaction between SiC and Ti/Al multilayered film is proposed and demonstrated.
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© 2008 by Japan Welding Society
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