KAGAKU KOGAKU RONBUNSHU
Online ISSN : 1349-9203
Print ISSN : 0386-216X
ISSN-L : 0386-216X
Synthesis of SiC Ultrafine Particles by Thermal CVD Method
Masayoshi SadakataHideo BabaMasayuki SatoTakeshi Sakai
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1989 Volume 15 Issue 1 Pages 91-97

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Abstract
Synthesis of SiC ultrafine particles was carried out by employing the thermal CVD method where SiH4 and a hydrocarbon gas were used as raw gas. Two hydrocarbon gases-CH4 and C2H2-were used and compared with each other. Hollow SiC particles of diameter 40 nm were produced in the former case, solid SiC particles of diameter 17 nm in the latter case. A reaction temperature above 1400 °C was required for the formation of pure SiC in the former case whilst 1200 °C was sufficient for the latter case. The effect of mixing mode between SiH4 and hydrocarbon was examined. Diffusion-type mixing could realize a higher conversion rate of SiH4 to SiC than premix-type mixing under the condition of stoichiometric mixing ratio at the same reaction temperature.
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© by THE SOCIETY OF CHEMICAL ENGINEERS, JAPAN
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