Abstracts of Symposium on Physical Organic Chemistry
37th Symposium on Structural Organic Chemistry
Session ID : 1A-01
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Synthesis and FET properties of n-type organic semiconductors containing thiazole rings and trifluoromethylphenyl groups
Masashi Mamada*Jun-ichi NishidaDaisuke KumakiShizuo TokitoYoshiro Yamashita
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Abstract
Recently, we have reported that linear p-conjugated molecules having trifluoromethylphenyl groups at the terminal positions are promising candidates for n-type FET materials. Electron deficient nitrogen-heterocycles such as thiazole, thiazolothiazole and benzothiadiazole have been used to improve electron mobilities and reduce threshold voltages of FET devices. We have now prepared thiazole-containing co-oligomers with trifluoromethylphenyl groups and fabricated FET devices. FET characteristics are strongly dependent on the nitrogen positions of thiazole rings. The derivative with 2-(4-trifluoromethylphenyl)thiazole units afforded a high performance n-type FET device with a high mobility and a low threshold voltage.
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© 2007 by the executive comittee of 37th Symposium on Structural Organic Chemistry
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