Abstract
High-performance poly-Si TFTs were created using the diode pumped solid-state (DPSS) continuous-wave (CW) laser lateral crystallization (CLC) method through fabrication processes at no higher than 450 °C. With decreasing Si film thickness, the grain size became finer and the surface orientation of the grains changed from (100) to other orientations. These effects reduced the field-effect mobility as the Si film became thinner, but with the CLC method we can still obtain a high field-effect mobility of over 300 cm2/Vs without applying special processing techniques, even from a Si film as thin as 50 nm. We expect this crystallization method to lead to the fabrication of high-performance Si-LSI circuits on large non-alkaline glass substrates.
