Abstract
A potential of high-power pure blue GaN-based semiconductor laser was evaluated. A maximum output power was estimated to be 0.8 W by using 10-μm-wide single stripe geometry. However, according to a theoretical prediction, a lifetime of this device at RT was found to be very short, i. e. it is only 1000 h under O.14 W-operation. This short lifetime may be attributed to the partial degradation of active layer around the threading dislocations. Further improvement of GaN substrate, which is used as a template of device structure, is necessary to realize highly reliable high-power pure blue semiconductor lasers for laser display applications.
