Abstract
The advanced lateral crystal growth (ALCG) process developed with the double-pulsed green laser annealing system enabled Si grains to be grown laterally and continuously through a step scan of a line beam in the same way as conventional excimer laser annealing (ELA). The field effect mobility of n-channel ALCG-SiTFTs for a current parallel to grain boundaries reaches a high level of 600 cm2/Vs and the strong temperature dependence of the mobility is close to that of single crystal MOS transistors. The 10μm-wide ultra fine beams up to 75 mm in length for the next generation p-SiTFT and up to 150 mm in length for OLED, applied to massproduction machines, were developed by using the beam delivery optics system in conjunction with the optical technique spatially combining multiple laser beams.
