High-Efficient and High-Power GaN-Based 405 nm Laser Diodes

Abstract

Existence of large internal loss due to indium compositional fluctuation at InGaN well was shown experimentally. By adopting small optical confinement factor in the well layer (Γ_well) to reduce optical absorption, the slope efficiency of the LD was improved from 1.5 W/A to 1.85 W/A (highest recorded). As a result, kink-free operation up to 300 mW at 80°C/CW was achieved.