Ultra-Fast Optical Switches Using Si Nano-Wire and Growth of Compound Semiconductor on Si Substrate

Abstract

Ultra-fast silicon all optical switches using two-photon absorption (TPA) were developed in silicon nanowire optical waveguide on silicon-on-insulator substrate. This waveguide can produce high optical intensities that yield optical nonlinearity such as TPA even at input optical powers typically used in fiber optic communication systems. In addition, we fabricated a high quality GaSb based quantum well (QW) on a Si substrate using AlSb initiation layer. The emission wavelength of QW was 1.55 μm at room temperature, so that the new function can be developed on Si-photonics using this QW.