Abstract
Diamond-like carbon (DLC) films have excellent properties: high hardness and low friction. However, their adhesion to most materials is generally very low. The method that we developed to enhance the adhesion in the cace of Si substrates involves the deposition of a Si-C buffer layer between the DLC film and the Si substrate by pulsed laser deposition (PLD) using a Si-C target. This method allows us to easily control the fraction of sp3 in the DLC film over the range of 50 to 80 % by changing the Si content of the target.
