Abstract
Extreme-ultraviolet lithography (EUVL) provides high resolution using 13.5nm light. It is the most promising technology for fabricating semiconductor devices at the hp 32-nm scale and smaller. However the short wavelength light causes some technical issues, such as high-power EUV light source, precise aspherical multilayered mirror, precise exposure system, low defect multi-layered mirror, high resolution resist and so on. The technology development is advanced in the project in each worldwide base. As a result, it has been advanced greatly in these ten years. Now, full field EUVL exposure tools are available, and semiconductor devices are demonstrated to be fabricated. In this article, we describe the current technical progress in EUV Lithography.
