Road to Higher Optical Output Power and Longer Wavelength of GaN Based Semiconductor Laser Diodes

Abstract

AlInGaN is most attractive material due to a directive semiconductor materials covering wide band energy ranging 0.8‒6.4 eV. AlInGaN based violet semiconductor laser diodes (LD) is fi rst demonstrated by Nichia Corporation in 1995. Since it, AlInGaN based LDs device characteristics have been improving and its lasing wavelength are expand from UV, blue, to green. In this paper, the technology histories of higher power and longer wavelength GaN based LDs are reviewed. Also, recent high optical power watt class blue and green LDs characteristics are introduced.