Abstract
High speed ( 10 Gbps) and low power consumption 850 nm VCSEL would be one of key transmitters
for optical interconnections and networks in consumer electronic devices in near future. In this report,
we investigated lasing characteristics of 850 nm InGaAs strained QW VCSELs with different In
composition for 10 Gbps data transmission to realize lower power consumption than that of traditional
GaAs QW VCSELs that is commercially available. Low dissipated energy per bit of 43 fJ/bit for
10 Gbps modulation was achieved.
