ダイレクトダイオードレーザー加工に向けた 高出力GaN系半導体レーザーの開発

中村 亘志; 持田 篤範; 萩野 裕幸; 能崎 信一郎; 川口 真生; 大森 弘治; 吉田 隆幸; 瀧川 信一; 片山 琢磨; 田中 毅

doi:10.2184/lsj.47.4_204

Laser Review

High-Power InGaN Lasers for Direct Diode Laser Processing

Koshi NAKAMURA, Atsunori MOCHIDA, Hiroyuki HAGINO, Shinichiro NOZAKI, Masao KAWAGUCHI, Kouji OOMORI, Takayuki YOSHIDA, Shinichi TAKIGAWA, Takuma KATAYAMA, Tsuyoshi TANAKA

Author information

Koshi NAKAMURA
Panasonic Corporation,
Atsunori MOCHIDA
Panasonic Corporation,
Hiroyuki HAGINO
Panasonic Corporation,
Shinichiro NOZAKI
Panasonic Corporation,
Masao KAWAGUCHI
Panasonic Corporation,
Kouji OOMORI
Panasonic Smart Factory Solutions Co.
Takayuki YOSHIDA
Panasonic Smart Factory Solutions Co.
Shinichi TAKIGAWA
Panasonic Corporation,
Takuma KATAYAMA
Panasonic Corporation,
Tsuyoshi TANAKA
Panasonic Corporation,

Keywords: Direct diode laser, GaN, Laser array

JOURNAL FREE ACCESS

2019 Volume 47 Issue 4 Pages 204-

DOI https://doi.org/10.2184/lsj.47.4_204

Details

Abstract

We achieved 129 W continuous-wave operation of a single-chip InGaN laser in the 400-nm wavelength range. Novel wall-plug-efficiency approximation clarifies the relations between the thermal saturation power and laser parameters, which enable high-power device designs. With the direct diode laser scheme, this short-wavelength light source shows more efficient copper processing than that operating in the 900-nm range.

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