Abstract
We demonstrate optical properties of GeSn wires fabricated by local liquid phase crystallization (LLPC).
The LLPC-GeSn wires have Sn fraction beyond the solid solubility in Ge and 5% tensile strain originated
from the difference in thermal expansion coefficient of GeSn and quartz substrates. They show more
than 50 times higher photoluminescence intensity than that of Ge crystal. We also show the electroluminescence
of the PIN diode and the characteristics of PN photodiode for near infrared light of 1.55 and
2 μm wavelength.
