The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
Laser Review
UV-C Wavelengths Laser Diode Using Single-Crystal AlN Substrate
Ziyi ZHANG, Maki KUSHIMOTO, Akira YOSHIKAWA, Chiaki SASAOKA, Leo J. SCHOWALTER, Hiroshi AMANO
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Keywords: Ultraviolet, UV-C, Laser diode, AlGaN, AlN
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2024 Volume 52 Issue 1 Pages 6-

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Abstract
The development of laser diodes (LDs) in the deep-ultraviolet (UV-C) wavelengths has been progressing rapidly in recent years. Our research group has demonstrated room-temperature continuous lasing of LDs in the 270-nm UV-C wavelength band. This article describes, the key technologies for achieving UV-C LDs: the control of p-type conductivity of AlGaN with high Al composition by polarization doping, and the pseudomorphic growth of AlGaN heterostructure using AlN single-crystal substrates.
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© 2024 by The Laser Society of Japan
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