Abstract
Lasers for communications such as optical fiber communications and silicon photonics require highspeed
and stable operation in high-temperature environments. Therefore, there is a need to improve the
temperature characteristics of semiconductor lasers. Metamorphic growth can create virtual substrates
with lattice constants between GaAs and InP substrates. Therefore, there is a high degree of freedom in
material selection. Metamorphic InGaAs lasers exhibit high temperature operation in the 1.3-micron
range, which is due to the large bandgap offset between the cladding and quantum well layers. So far, we
have achieved laser oscillation up to 200°C and a characteristic temperature of 220 K. In this paper, we
will introduce the optimization of crystal growth and the characteristics of the fabricated laser.
