Abstract
We present an investigation of the optical interaction of metal cladding with guided waves in ion-implanted Ga As compound semiconductor waveguides under various implant conditions . At optical frequencies, such waveguides can be conveniently represented by a complex dielectric constant which depends on the carrier concentration in the implant region. The attenuation in these opical waveguides due to the free carrier absorption is compared with that due to propagation losses in metals.
