Abstract
Leakage current in p-substrate 1.3 μm InGaAsP/InP Buried Crescent (PBC) lasers has been examinedcompared with n-substrate Buried Crescent (BC) lasers. It has been found that the value of the leakage currentcan be estimated by dV/dI-I (differential resistance vs. current) curve above threshold. The leakage current intypical PBC laser is about one order of magnitude smaller than that in BC laser, in which the leakage currentbecomes a few 10 mA at high temperature (70-80°C) and degrades remarkably the P-I (light output power vs.current) characteristics. In order to achieve excellent characteristics at high temperature and high power levels, it is important to minimize the current flowing into p-blocking layer adjacent to the active region.
